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Spin echo from erbium implanted silicon

Hughes, Mark A.; Panjwani, Naitik A.; Urdampilleta, Matias; Homewood, Kevin P.; Murdin, Ben; Carey, J. David

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Naitik A. Panjwani

Matias Urdampilleta

Kevin P. Homewood

Ben Murdin

J. David Carey


Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3 × 1017 cm−3 and O to a concentration of 1020 cm−3, the electron spin coherence time, T2, and the spin-lattice relaxation time, T1, were measured to be 7.5 μs and ∼1 ms, respectively, at 5 K. The spin echo decay profile displayed strong modulation, which was consistent with the super-hyperfine interaction between Er3+ and a spin bath of 29Si nuclei. The calculated spectral diffusion time was similar to the measured T2, which indicated that T2 was limited by spectral diffusion due to T1-induced flips of neighboring Er3+ spins. The origin of the echo is an Er center surrounded by six O atoms with monoclinic C1h site symmetry.


Hughes, M. A., Panjwani, N. A., Urdampilleta, M., Homewood, K. P., Murdin, B., & Carey, J. D. (2021). Spin echo from erbium implanted silicon. Applied Physics Letters, 118(19), 194001.

Journal Article Type Article
Acceptance Date Apr 29, 2021
Online Publication Date May 12, 2021
Publication Date May 10, 2021
Deposit Date May 12, 2021
Publicly Available Date May 12, 2021
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Volume 118
Issue 19
Pages 194001
Keywords Physics and Astronomy (miscellaneous)
Publisher URL
Related Public URLs
Additional Information Access Information : This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta, Kevin P. Homewood, Ben Murdin, and J. David Carey , "Spin echo from erbium implanted silicon", Applied Physics Letters 118, 194001 (2021) and may be found at
Funders : Engineering and Physical Sciences Research Council (EPSRC);European Research Council (ERC)
Projects : Erbium implanted silicon for solid state quantum technologies
Grant Number: EP/R011885/1
Grant Number: EP/H026622/1
Grant Number: SILAMPS 226470


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