Kerr nonlinearity in silicon beyond 2.35μm
(2011)
Presentation / Conference Contribution
We present measurements of χ (3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10 -18 m 2 /W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.