Damage accumulation and dopant migration during shallow As and Sb implantation into Si
(2004)
Journal Article
Werner, M., van den Berg, J., Armour, D., Vandervorst, W., Collart, E., Goldberg, R., …Noakes, T. (2004). Damage accumulation and dopant migration during shallow As and Sb implantation into Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 216, 67-74. https://doi.org/10.1016/j.nimb.2003.11.022
The damage evolution and concomitant dopant redistribution as a function of ion fluence during ultra shallow, heavy ion implants into Si have been investigated using medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). Thes... Read More about Damage accumulation and dopant migration during shallow As and Sb implantation into Si.