Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k⋅p theory and configuration-interaction method
(2009)
Journal Article
Tomic, S., & Vukmirović, N. (2009). Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k⋅p theory and configuration-interaction method. Physical review B: Condensed matter and materials physics, 79(24), 245330. https://doi.org/10.1103/PhysRevB.79.245330
Received 2 March 2009; published 26 June 2009
Excitons and biexcitons in GaN/AlN quantum dots (QD) were investigated with special emphasis on the use of these QDs for single-photon source applications. The theoretical methodology for the calculati...
Read More about Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k⋅p theory and configuration-interaction method.