All Outputs (64)

Integrated Nanophotonic Control of Thermal Bimorph Microactuators (2024)
Journal Article
Nezhad, M. P. (2024). Integrated Nanophotonic Control of Thermal Bimorph Microactuators. #Journal not on list, 1-6. https://doi.org/10.1109/marss61851.2024.10612732

A new type of thermal bimorph microactuator is presented, in which energy delivery to the actuator is achieved through an integrated nanophotonics approach. This approach has been adopted from existing photonic device and optical communications techn... Read More about Integrated Nanophotonic Control of Thermal Bimorph Microactuators.

On the merits of a unified physics and engineering undergraduate programme of study (2022)
Journal Article
Nezhad, M. P. (2022). On the merits of a unified physics and engineering undergraduate programme of study. Physics Education, 57, 045501. https://doi.org/10.1088/1361-6552/ac529a

The merits of a pedagogic and programmatic unification between physics and several engineering disciplines at the undergraduate level are discussed. Arguments for such a unification are presented, based on the strong overlap of core teaching material... Read More about On the merits of a unified physics and engineering undergraduate programme of study.

Suspended nanocrystalline diamond ridge waveguides designed for the mid-infrared (2021)
Journal Article
Rahmati, A. T., Mashanovich, G. Z., & Nezhad, M. P. (2021). Suspended nanocrystalline diamond ridge waveguides designed for the mid-infrared. Journal of Optics, 23, 075801. https://doi.org/10.1088/2040-8986/ac0873

A comprehensive study and design of air-clad suspended ridge diamond waveguides for operation across the 2.5–16 µm spectral range is presented, specifically targeting nanocrystalline diamond (NCD) thin films directly grown on silicon substrates. Thre... Read More about Suspended nanocrystalline diamond ridge waveguides designed for the mid-infrared.

Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma (2019)
Journal Article
Panduranga, P., Abdou, A., Ren, Z., H. Pedersen, R., & P. Nezhad, M. (2019). Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma. Journal of Vacuum Science and Technology B, 37(6), https://doi.org/10.1116/1.5116021

The characteristics of isotropic etching of silicon in a purely inductively coupled SF plasma are quantitatively studied. Since the etch results are strongly dependent on mask features, the authors investigated both large area and narrow trench etch... Read More about Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma.

CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates (2016)
Journal Article
Richter, J., Abdou, A., Williams, O., Witzens, J., & Nezhad, M. (2016). CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates. Optical Materials Express, 6, 3916-3926. https://doi.org/10.1364/OME.6.003916

We demonstrate that nanocrystalline diamond films grown on highly doped silicon substrates can be patterned using a CO2 laser operating at a wavelength of 10.6 μm, where both low doped silicon and diamond exhibit negligible optical absorption. The pa... Read More about CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates.

On the measurement of the Pockels effect in strained silicon (2015)
Journal Article
Azadeh, S., Merget, F., Nezhad, M., & Witzens, J. (2015). On the measurement of the Pockels effect in strained silicon. Optics Letters, 40(8), 1877-1880. https://doi.org/10.1364/OL.40.001877

We measure the voltage-dependent phase shift in silicon waveguides strained by a silicon nitride layer and show that, in our measurements, the phase shift is due to free carrier accumulation inside the waveguides. Nonetheless, inverting the applied v... Read More about On the measurement of the Pockels effect in strained silicon.

Subwavelength semiconductor lasers for dense chip-scale integration (2014)
Journal Article

Metal-clad subwavelength lasers have recently become excellent candidates for light sources in densely packed chip-scale photonic circuits. In this review, we summarize recent research efforts in the theory, design, fabrication, and characterization... Read More about Subwavelength semiconductor lasers for dense chip-scale integration.

Nanoscale Metallo-Dielectric Coherent Light Sources (2014)
Book Chapter

This chapter describes the design, fabrication and characterisation of several instances of coherent metallo-dielectric nanoscale light sources. A 3D sub-wavelength nanolaser with a composite metallo-dielectric cavity is presented and room temperatur... Read More about Nanoscale Metallo-Dielectric Coherent Light Sources.

Silicon nanophotonics integration for chip-scale optical communication (2014)
Presentation / Conference Contribution

We will describe recent work in the area of integrated nanophotonics that have applications to on chip communication. In this context we will present passive filters and resonators produced through periodic waveguide modulation. We will also demonstr... Read More about Silicon nanophotonics integration for chip-scale optical communication.

Silicon nanophotonic devices for chip-scale optical communication applications [Invited] (2013)
Journal Article
Fainman, Y., Nezhad, M., Tan, D., Ikeda, K., Bondarenko, O., & Grieco, A. (2013). Silicon nanophotonic devices for chip-scale optical communication applications [Invited]. Applied Optics, 52(4), 613-624. https://doi.org/10.1364/AO.52.000613

This paper reviews recent work in the area of silicon photonic devices and circuits for monolithic and heterogeneous integration of circuits and systems on a chip. In this context, it presents fabrication results for producing low-loss silicon wavegu... Read More about Silicon nanophotonic devices for chip-scale optical communication applications [Invited].

Active nanophotonics technology (2013)
Presentation / Conference Contribution

Composite metal-dielectric-semiconductor nanostructures are used to design, fabricate and test nanoscale resonators and nanolasers that utilize various modes confined in all three dimensions. Integration with silicon photonics material platform is al... Read More about Active nanophotonics technology.

Novel transmission lines for Si MZI modulators (2013)
Presentation / Conference Contribution

We present MZI Silicon Photonics modulators with an advanced transmission line design which overcomes bandwidth limitations arising from crosstalk and improves linear losses. Push-pull optical bandwidth of 22.2 GHz with V π L=1.6 V·cm is experimental... Read More about Novel transmission lines for Si MZI modulators.

Electrically pumped metallo-dielectric pedestal nanolasers (2013)
Presentation / Conference Contribution

Electrically pumped metallo-dielectric nanolasers are demonstrated. Employing a two-step InP chemical etching, we obtain straight pedestal sidewalls and preferentially reduce the diameter of the n-doped InP cladding more than the p-doped one for opti... Read More about Electrically pumped metallo-dielectric pedestal nanolasers.

Silicon photonics plasma-modulators with advanced transmission line design (2013)
Journal Article
Merget, F., Azadeh, S., Mueller, J., Shen, B., Nezhad, M., Hauck, J., & Witzens, J. (2013). Silicon photonics plasma-modulators with advanced transmission line design. Optics Express, 21(17), 19593-19607. https://doi.org/10.1364/OE.21.019593

We have investigated two novel concepts for the design of transmission lines in travelling wave Mach-Zehnder interferometer based Silicon Photonics depletion modulators overcoming the analog bandwidth limitations arising from cross-talk between signa... Read More about Silicon photonics plasma-modulators with advanced transmission line design.

Purcell effect in sub-wavelength semiconductor lasers (2013)
Journal Article
Gu, Q., Slutsky, B., Vallini, F., Smalley, J., Nezhad, M., Frateschi, N., & Fainman, Y. (2013). Purcell effect in sub-wavelength semiconductor lasers. Optics Express, 21(13), 15603-15617. https://doi.org/10.1364/OE.21.015603

We present a formal treatment of the modification of spontaneous emission rate by a cavity (Purcell effect) in sub-wavelength semiconductor lasers. To explicitly express the assumptions upon which our formalism builds, we summarize the results of non... Read More about Purcell effect in sub-wavelength semiconductor lasers.

Optical bistability in a silicon waveguide distributed bragg reflector Fabry-pérot resonator (2012)
Journal Article
Grieco, A., Slutsky, B., Tan, D., Zamek, S., Nezhad, M., & Fainman, Y. (2012). Optical bistability in a silicon waveguide distributed bragg reflector Fabry-pérot resonator. Journal of Lightwave Technology, 30(14), 2352-2355. https://doi.org/10.1109/JLT.2012.2197731

We demonstrate optical bistability in a silicon waveguide Fabry-Pérot resonator formed by a pair of distributed Bragg reflectors. In the bistable regime, the output power of the resonator ceases to be uniquely determined by the input power because mu... Read More about Optical bistability in a silicon waveguide distributed bragg reflector Fabry-pérot resonator.

Nanophotonic devices and circuits (2011)
Presentation / Conference Contribution

Advances in nanoscale fabrication techniques in dielectric and metallic material systems has opened up new opportunities in photonics and plasmonics for solving long standing problems in information systems and telecommunication systems. In this talk... Read More about Nanophotonic devices and circuits.

Analog signal processing/filtering (2011)
Presentation / Conference Contribution

In this talk, some of the metamaterials and devices that recently have been demonstrated in the authors' lab are discussed. These include graded-index lenses, birefringent elements that utilize a combination of geometry and material properties to sep... Read More about Analog signal processing/filtering.

Kerr nonlinearity in silicon beyond 2.35μm (2011)
Presentation / Conference Contribution

We present measurements of χ (3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10 -18 m 2 /W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.

Kerr nonlinearity in silicon beyond 2.35μm (2011)
Presentation / Conference Contribution

We present measurements of χ ^(3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10^( -18) m ^(2) /W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.