Outputs (41)

Electrical properties of bi-implanted amorphous chalcogenide films (2015)
Journal Article
Fedorenko, Y., & Hughes, M. (2015). Electrical properties of bi-implanted amorphous chalcogenide films. Thin Solid Films, 589, 369-375. https://doi.org/10.1016/j.tsf.2015.05.036

The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge–Sb–Te, and Ga–La–S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogeni... Read More about Electrical properties of bi-implanted amorphous chalcogenide films.

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies (2014)
Journal Article
silicon for photonic and quantum technologies. Optics express, 22(24), 29292-29303. https://doi.org/10.1364/OE.22.029292

We report the lattice site and symmetry of optically active Dy3+
and Tm3+ implanted Si. Local symmetry was determined by fitting crystal
field parameters (CFPs), corresponding to various common symmetries, to
the ground state splitting determined... Read More about Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies.

n-type chalcogenides by ion implantation (2014)
Journal Article
Hughes, M., Fedorenko, Y., Gholipour, B., Yao, J., Lee, T., Gwilliam, R., …Curry, R. (2014). n-type chalcogenides by ion implantation. Nature communications, 5, 5346. https://doi.org/10.1038/ncomms6346

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite
for many electronic applications. Chalcogenide glasses are p-type semiconductors and their
applications have been limited by the extraordinary difficulty... Read More about n-type chalcogenides by ion implantation.

Electroluminescence from an electrostatically doped carbon nanotube field-effect transistor (2014)
Journal Article
carbon nanotube field-effect transistor. Nanoscience and Nanotechnology Letters, 6(10), 881-886. https://doi.org/10.1166/nnl.2014.1831

We report electroluminescence (EL) from a carbon nanotube field-effect transistor with split-gates.
EL is generated by the electrostatic doping technique. Six EL bands could be observed, with the
strongest band peaking between 0.867 and 0.850 eV wi... Read More about Electroluminescence from an electrostatically doped carbon nanotube field-effect transistor.

Ion-implantation-enhanced chalcogenide-glass resistive-switching devices (2014)
Journal Article
Hughes, M., Fedorenko, Y., Gwilliam, G., Homewood, K., Hinder, S., Gholipour, B., …Curry, R. (2014). Ion-implantation-enhanced chalcogenide-glass resistive-switching devices. Applied Physics Letters, 105, 083506. https://doi.org/10.1063/1.4894245

We report amorphous GaLaSO-based resistive switching devices, with and without
Pb-implantation before deposition of an Al active electrode, which switch due to deposition and
dissolution of Al metal filaments. The devices set at 2–3 and 3–4V with r... Read More about Ion-implantation-enhanced chalcogenide-glass resistive-switching devices.

Photocurrent from a carbon nanotube diode with splitgate and asymmetric contact geometry (2014)
Journal Article
and asymmetric contact geometry. Materials Research Express, 1(2), 026304. https://doi.org/10.1088/2053-1591/1/2/026304

We fabricated a Ti/Pd asymmetrically contacted single carbon nanotube (CNT)
field-effect transistor (FET) with split-gates. Transfer characteristics can be
explained if the Schottky barrier for electrons is lower at the Pd contact than it is
at th... Read More about Photocurrent from a carbon nanotube diode with splitgate and asymmetric contact geometry.

Waveguides in Ni-doped glass and glass–ceramic written with a 1 kHz femtosecond laser (2014)
Journal Article
femtosecond laser. Optical Materials, 36(6), 1604-1608. https://doi.org/10.1016/j.optmat.2014.04.042

We report waveguides in Ni-doped Li2O–Ga2O3–SiO2 (Ni:LGS) glass and glass–ceramic (GC) fabricated
with a femtosecond (fs) laser with repetition rate of 1 kHz. When the glass is annealed to form a GC,
the waveguides are erased. However, in the GC th... Read More about Waveguides in Ni-doped glass and glass–ceramic written with a 1 kHz femtosecond laser.

Split gate and asymmetric contact carbon nanotube optical devices (2014)
Journal Article
Hughes, M., Homewood, K., Curry, R., Ohno, Y., & Mizutani, T. (2014). Split gate and asymmetric contact carbon nanotube optical devices. https://doi.org/10.1117/12.2036962

Asymmetric contacts or split gate geometries can be used to obtain rectification, electroluminescence (EL) and photocurrent from carbon nanotube field effect transistors. Here, we report devices with both split gates and asymmetric contacts and show... Read More about Split gate and asymmetric contact carbon nanotube optical devices.

An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry (2013)
Journal Article
Hughes, M., Homewood, K., Curry, R., & Ohno, Y. (2013). An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry. Applied Physics Letters, 103(13), 133508. https://doi.org/10.1063/1.4823602

A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an ideality factor (η) of 1.38. When the gate above the... Read More about An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry.

Direct laser writing of relief diffraction gratings into a bulk chalcogenide glass (2012)
Journal Article
into a bulk chalcogenide glass. Journal of the Optical Society of America B, 29(10), 2779-2786. https://doi.org/10.1364/JOSAB.29.002779

We inscribed relief diffraction gratings with periods of 6, 14, and 24 μm into the surface of Ge15Ga3Sb12S70 bulk
glass by the material’s ablation using a femtosecond λ � 800 nm Ti:sapphire pulsed laser. The laser writing was
done with sample imple... Read More about Direct laser writing of relief diffraction gratings into a bulk chalcogenide glass.