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Kerr nonlinearity in silicon beyond 2.35μm (2011)
Presentation / Conference Contribution

We present measurements of χ ^(3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10^( -18) m ^(2) /W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.

Kerr nonlinearity in silicon beyond 2.35μm (2011)
Presentation / Conference Contribution

We present measurements of χ (3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10 -18 m 2 /W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.

Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks (2011)
Journal Article
Nezhad, M., Bondarenko, O., Khajavikhan, M., Simic, A., & Fainman, Y. (2011). Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks. Optics Express, 19(20), 18827-18832. https://doi.org/10.1364/OE.19.018827

An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-on-insulator chip covered with a e-beam patter... Read More about Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks.

Active and passive composite metal-Dielectric nanophotonic devices (2011)
Presentation / Conference Contribution

We explore metallo-dielectric composite nanostructures for localization and resonant excitation of optical fields and investigate design, fabrication and testing of nanolasers. Integration with silicon photonics material platform is demonstrated.