Outputs (40)

High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass (2022)
Journal Article
Hughes, M., McMaster, R., Proctor, J., Hewak, D., Suzuki, T., & Oshidi, Y. (2022). High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass. High Pressure Research, https://doi.org/10.1080/08957959.2022.2044031

We report the effects of high pressure, up to 10.45 GPa, on the photoluminescence of Bi-doped yttria-alumina-silica (Bi:YAlSi) glass under 532 nm excitation. We identify three emission bands attributed to Bi3+, Bi+ and the controversial NIR emitting... Read More about High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass.

Coupling of erbium-implanted silicon to a superconducting resonator (2021)
Journal Article
Hughes, M., Panjwani, N., Urdampilleta, M., Theodoropoulou, N., Wisby, I., Homewood, K., …Carey, J. (2021). Coupling of erbium-implanted silicon to a superconducting resonator. Physical Review Applied, 16(3), 034006. https://doi.org/10.1103/physrevapplied.16.034006

Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different Er centers are generated during the i... Read More about Coupling of erbium-implanted silicon to a superconducting resonator.

Spin echo from erbium implanted silicon (2021)
Journal Article
Hughes, M. A., Panjwani, N. A., Urdampilleta, M., Homewood, K. P., Murdin, B., & Carey, J. D. (2021). Spin echo from erbium implanted silicon. Applied Physics Letters, 118(19), 194001. https://doi.org/10.1063/5.0046904

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3 × 1017 cm−3 and O to a concentration of 1020 cm−3, the electron spi... Read More about Spin echo from erbium implanted silicon.

Energy transfer in Cr and Nd co-doped Si-B-Na-Al-Ca-Zr-O glasses (2019)
Journal Article
Hughes, M., Li, H., Curry, R., Suzuki, T., & Ohishi, Y. (2020). Energy transfer in Cr and Nd co-doped Si-B-Na-Al-Ca-Zr-O glasses. Journal of Non-Crystalline Solids, 530, https://doi.org/10.1016/j.jnoncrysol.2019.119769

Cr and Nd co-doped glasses are potential gain media for solar pumped lasers (SPLs). Tanabe-Sugano analysis shows that Cr doped Si-B-Na-Al-Ca-Zr-O (SBNACZ) glass contains a mixture of Cr3+ with octahedral coordination and Cr6+with unknown coordinatio... Read More about Energy transfer in Cr and Nd co-doped Si-B-Na-Al-Ca-Zr-O glasses.

Optically modulated magnetic resonance of erbium implanted silicon (2019)
Journal Article
Hughes, M., Li, H., Theodoropoulou, N., & Carey, J. (2019). Optically modulated magnetic resonance of erbium implanted silicon. Scientific reports, 9(1), 19031. https://doi.org/10.1038/s41598-019-55246-z

Er implanted Si is an important candidate for quantum and photonic applications, but the Er centres involved are poorly understood, which has hindered development of these applications. Here we present the first measurement of the crystal field split... Read More about Optically modulated magnetic resonance of erbium implanted silicon.

Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon (2019)
Journal Article
Peach, T., Stockbridge, K., Li, J., Lourenco, M., Homewood, K., Hughes, M., …Clowes, S. (2019). Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon. Applied Physics Letters, 115(7), 072102. https://doi.org/10.1063/1.5115835

This study reports the effect of an increasing ion dose on both the electrical activation yield and the characteristic properties of implanted bismuth donors in silicon. A strong dependence of implant fluence is observed on both the yield of bismuth... Read More about Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon.

The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon (2018)
Journal Article
Peach, T., Homewood, K., Lourenco, M., Hughes, M., Saeedi, K., Stavrias, N., …Clowes, S. (2018). The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon. Advanced Quantum Technologies, 1(2), 1800038. https://doi.org/10.1002/qute.201800038

This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D0X, p... Read More about The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon.

High speed chalcogenide glass electrochemical metallization cells with various active metals (2018)
Journal Article
Hughes, M., Burgess, A., Hinder, S., Gholizadeh, A., Craig, C., & Hewak, D. (2018). High speed chalcogenide glass electrochemical metallization cells with various active metals. Nanotechnology, 29(31), #315202. https://doi.org/10.1088/1361-6528/aac483

We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent a... Read More about High speed chalcogenide glass electrochemical metallization cells with various active metals.

Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics (2016)
Journal Article
Hughes, M., Lourenco, M., Lai, K., Sofi, I., Ludurczak, W., Wong, L., …Homewood, K. (2016). Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics. Advanced functional materials, 26(12), 1986-1994. https://doi.org/10.1002/adfm.201504662

Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare-earth (RE) impl... Read More about Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics.

Electrical properties of bi-implanted amorphous chalcogenide films (2015)
Journal Article
Fedorenko, Y., & Hughes, M. (2015). Electrical properties of bi-implanted amorphous chalcogenide films. Thin Solid Films, 589, 369-375. https://doi.org/10.1016/j.tsf.2015.05.036

The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge–Sb–Te, and Ga–La–S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogeni... Read More about Electrical properties of bi-implanted amorphous chalcogenide films.