Room temperature lasing from subwavelength metal-insulator-semiconductor structures
(2009)
Conference Proceeding
Nezhad, M., Simic, A., Bondarenko, O., Slutsky, B., Mizrahi, A., Feng, L., …Fainman, Y. (2009). Room temperature lasing from subwavelength metal-insulator-semiconductor structures. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference. https://doi.org/10.1364/CLEO.2009.CMD2
We report pulsed room temperature lasing from optically pumped subwavelength metal-insulator-semiconductor structures. The lasers consist of InGaAsP gain disks embedded in a SiO 2 /aluminum bi-layer. Lasing at 1520 nm from a 730 nm gain core is demon... Read More about Room temperature lasing from subwavelength metal-insulator-semiconductor structures.