Dr Mark Hughes' Outputs (44)

n-type chalcogenides by ion implantation (2014)
Journal Article

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite
for many electronic applications. Chalcogenide glasses are p-type semiconductors and their
applications have been limited by the extraordinary difficulty... Read More about n-type chalcogenides by ion implantation.

Optically modulated magnetic resonance of erbium implanted silicon (2019)
Journal Article

Er implanted Si is an important candidate for quantum and photonic applications, but the Er centres involved are poorly understood, which has hindered development of these applications. Here we present the first measurement of the crystal field split... Read More about Optically modulated magnetic resonance of erbium implanted silicon.

High speed chalcogenide glass electrochemical metallization cells with various active metals (2018)
Journal Article
Hughes, M., Burgess, A., Hinder, S., Gholizadeh, A., Craig, C., & Hewak, D. (2018). High speed chalcogenide glass electrochemical metallization cells with various active metals. Nanotechnology, 29(31), #315202. https://doi.org/10.1088/1361-6528/aac483

We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent a... Read More about High speed chalcogenide glass electrochemical metallization cells with various active metals.

Spin echo from erbium implanted silicon (2021)
Journal Article
Hughes, M. A., Panjwani, N. A., Urdampilleta, M., Homewood, K. P., Murdin, B., & Carey, J. D. (2021). Spin echo from erbium implanted silicon. Applied Physics Letters, 118(19), 194001. https://doi.org/10.1063/5.0046904

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3 × 1017 cm−3 and O to a concentration of 1020 cm−3, the electron spi... Read More about Spin echo from erbium implanted silicon.

An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry (2013)
Journal Article
Hughes, M., Homewood, K., Curry, R., & Ohno, Y. (2013). An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry. Applied Physics Letters, 103(13), 133508. https://doi.org/10.1063/1.4823602

A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an ideality factor (η) of 1.38. When the gate above the... Read More about An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry.

Experimental research on the static and fatigue properties of the external anchorage structure with steel anchor tube of the stayed cables (2025)
Presentation / Conference Contribution

Experimental study on mechanism of impressed current cathodic protection of galvanized steel wire for bridge cable (2025)
Presentation / Conference Contribution

Rapid quench annealing of Er implanted Si for quantum networking applications (2024)
Journal Article

Erbium-implanted silicon (Er:Si) holds promise for quantum networking, but the formation of multiple Er centers poses a challenge. We show that the cubic center (Er-C) has C 2v or lower symmetry and propose all Er centers range between full Si-and fu... Read More about Rapid quench annealing of Er implanted Si for quantum networking applications.

Optical and electrical characteristics of erbium doped solids for quantum technology applications (2023)
Thesis

This thesis explores the potential of Er:Si for quantum technology applications. The
unique optical transitions of erbium in the 1.5 μm region make it a suitable candidate
for both telecommunication and silicon photonics applications and the proper... Read More about Optical and electrical characteristics of erbium doped solids for quantum technology applications.

High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass (2022)
Journal Article

We report the effects of high pressure, up to 10.45 GPa, on the photoluminescence of Bi-doped yttria-alumina-silica (Bi:YAlSi) glass under 532 nm excitation. We identify three emission bands attributed to Bi3+, Bi+ and the controversial NIR emitting... Read More about High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass.

Coupling of erbium-implanted silicon to a superconducting resonator (2021)
Journal Article

Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different
Er
centers are generated during the i... Read More about Coupling of erbium-implanted silicon to a superconducting resonator.

Energy transfer in Cr and Nd co-doped Si-B-Na-Al-Ca-Zr-O glasses (2019)
Journal Article

Cr and Nd co-doped glasses are potential gain media for solar pumped lasers (SPLs). Tanabe-Sugano analysis
shows that Cr doped Si-B-Na-Al-Ca-Zr-O (SBNACZ) glass contains a mixture of Cr3+ with octahedral coordination and Cr6+with unknown coordinatio... Read More about Energy transfer in Cr and Nd co-doped Si-B-Na-Al-Ca-Zr-O glasses.

Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon (2019)
Journal Article

This study reports the effect of an increasing ion dose on both the electrical activation yield and the characteristic properties of implanted bismuth donors in silicon. A strong dependence of implant fluence is observed on both the yield of bismuth... Read More about Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon.

The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon (2018)
Journal Article

This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D0X, p... Read More about The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon.

Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics (2016)
Journal Article

Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare-earth (RE) impl... Read More about Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics.

Electrical properties of bi-implanted amorphous chalcogenide films (2015)
Journal Article
Fedorenko, Y., & Hughes, M. (2015). Electrical properties of bi-implanted amorphous chalcogenide films. Thin Solid Films, 589, 369-375. https://doi.org/10.1016/j.tsf.2015.05.036

The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge–Sb–Te, and Ga–La–S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogeni... Read More about Electrical properties of bi-implanted amorphous chalcogenide films.

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies (2014)
Journal Article
silicon for photonic and quantum technologies. Optics express, 22(24), 29292-29303. https://doi.org/10.1364/OE.22.029292

We report the lattice site and symmetry of optically active Dy3+
and Tm3+ implanted Si. Local symmetry was determined by fitting crystal
field parameters (CFPs), corresponding to various common symmetries, to
the ground state splitting determined... Read More about Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies.

Electroluminescence from an electrostatically doped carbon nanotube field-effect transistor (2014)
Journal Article
carbon nanotube field-effect transistor. Nanoscience and Nanotechnology Letters, 6(10), 881-886. https://doi.org/10.1166/nnl.2014.1831

We report electroluminescence (EL) from a carbon nanotube field-effect transistor with split-gates.
EL is generated by the electrostatic doping technique. Six EL bands could be observed, with the
strongest band peaking between 0.867 and 0.850 eV wi... Read More about Electroluminescence from an electrostatically doped carbon nanotube field-effect transistor.

Ion-implantation-enhanced chalcogenide-glass resistive-switching devices (2014)
Journal Article

We report amorphous GaLaSO-based resistive switching devices, with and without
Pb-implantation before deposition of an Al active electrode, which switch due to deposition and
dissolution of Al metal filaments. The devices set at 2–3 and 3–4V with r... Read More about Ion-implantation-enhanced chalcogenide-glass resistive-switching devices.

Photocurrent from a carbon nanotube diode with splitgate and asymmetric contact geometry (2014)
Journal Article
and asymmetric contact geometry. Materials Research Express, 1(2), 026304. https://doi.org/10.1088/2053-1591/1/2/026304

We fabricated a Ti/Pd asymmetrically contacted single carbon nanotube (CNT)
field-effect transistor (FET) with split-gates. Transfer characteristics can be
explained if the Schottky barrier for electrons is lower at the Pd contact than it is
at th... Read More about Photocurrent from a carbon nanotube diode with splitgate and asymmetric contact geometry.