Outputs (41)

Optical and electrical characteristics of erbium doped solids for quantum technology applications (2023)
Thesis
Theoropoulou, N. (2023). Optical and electrical characteristics of erbium doped solids for quantum technology applications. (Thesis). University of Salford

This thesis explores the potential of Er:Si for quantum technology applications. The unique optical transitions of erbium in the 1.5 μm region make it a suitable candidate for both telecommunication and silicon photonics applications and the proper... Read More about Optical and electrical characteristics of erbium doped solids for quantum technology applications.

High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass (2022)
Journal Article
Hughes, M., McMaster, R., Proctor, J., Hewak, D., Suzuki, T., & Oshidi, Y. (2022). High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass. High Pressure Research, https://doi.org/10.1080/08957959.2022.2044031

We report the effects of high pressure, up to 10.45 GPa, on the photoluminescence of Bi-doped yttria-alumina-silica (Bi:YAlSi) glass under 532 nm excitation. We identify three emission bands attributed to Bi3+, Bi+ and the controversial NIR emitting... Read More about High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass.

Coupling of erbium-implanted silicon to a superconducting resonator (2021)
Journal Article
Hughes, M., Panjwani, N., Urdampilleta, M., Theodoropoulou, N., Wisby, I., Homewood, K., …Carey, J. (2021). Coupling of erbium-implanted silicon to a superconducting resonator. Physical Review Applied, 16(3), 034006. https://doi.org/10.1103/physrevapplied.16.034006

Erbium-implanted silicon is promising for both photonic and quantum-technology platforms, since it possesses both telecommunications and integrated-circuit processing compatibility. However, several different Er centers are generated during the i... Read More about Coupling of erbium-implanted silicon to a superconducting resonator.

Spin echo from erbium implanted silicon (2021)
Journal Article
Hughes, M. A., Panjwani, N. A., Urdampilleta, M., Homewood, K. P., Murdin, B., & Carey, J. D. (2021). Spin echo from erbium implanted silicon. Applied Physics Letters, 118(19), 194001. https://doi.org/10.1063/5.0046904

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3 × 1017 cm−3 and O to a concentration of 1020 cm−3, the electron spi... Read More about Spin echo from erbium implanted silicon.

Energy transfer in Cr and Nd co-doped Si-B-Na-Al-Ca-Zr-O glasses (2019)
Journal Article
Hughes, M., Li, H., Curry, R., Suzuki, T., & Ohishi, Y. (2020). Energy transfer in Cr and Nd co-doped Si-B-Na-Al-Ca-Zr-O glasses. Journal of Non-Crystalline Solids, 530, https://doi.org/10.1016/j.jnoncrysol.2019.119769

Cr and Nd co-doped glasses are potential gain media for solar pumped lasers (SPLs). Tanabe-Sugano analysis shows that Cr doped Si-B-Na-Al-Ca-Zr-O (SBNACZ) glass contains a mixture of Cr3+ with octahedral coordination and Cr6+with unknown coordinatio... Read More about Energy transfer in Cr and Nd co-doped Si-B-Na-Al-Ca-Zr-O glasses.

Optically modulated magnetic resonance of erbium implanted silicon (2019)
Journal Article
Hughes, M., Li, H., Theodoropoulou, N., & Carey, J. (2019). Optically modulated magnetic resonance of erbium implanted silicon. Scientific reports, 9(1), 19031. https://doi.org/10.1038/s41598-019-55246-z

Er implanted Si is an important candidate for quantum and photonic applications, but the Er centres involved are poorly understood, which has hindered development of these applications. Here we present the first measurement of the crystal field split... Read More about Optically modulated magnetic resonance of erbium implanted silicon.

Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon (2019)
Journal Article
Peach, T., Stockbridge, K., Li, J., Lourenco, M., Homewood, K., Hughes, M., …Clowes, S. (2019). Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon. Applied Physics Letters, 115(7), 072102. https://doi.org/10.1063/1.5115835

This study reports the effect of an increasing ion dose on both the electrical activation yield and the characteristic properties of implanted bismuth donors in silicon. A strong dependence of implant fluence is observed on both the yield of bismuth... Read More about Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon.

The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon (2018)
Journal Article
Peach, T., Homewood, K., Lourenco, M., Hughes, M., Saeedi, K., Stavrias, N., …Clowes, S. (2018). The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon. Advanced Quantum Technologies, 1(2), 1800038. https://doi.org/10.1002/qute.201800038

This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D0X, p... Read More about The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon.

High speed chalcogenide glass electrochemical metallization cells with various active metals (2018)
Journal Article
Hughes, M., Burgess, A., Hinder, S., Gholizadeh, A., Craig, C., & Hewak, D. (2018). High speed chalcogenide glass electrochemical metallization cells with various active metals. Nanotechnology, 29(31), #315202. https://doi.org/10.1088/1361-6528/aac483

We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent a... Read More about High speed chalcogenide glass electrochemical metallization cells with various active metals.

Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics (2016)
Journal Article
Hughes, M., Lourenco, M., Lai, K., Sofi, I., Ludurczak, W., Wong, L., …Homewood, K. (2016). Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics. Advanced functional materials, 26(12), 1986-1994. https://doi.org/10.1002/adfm.201504662

Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare-earth (RE) impl... Read More about Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics.

Electrical properties of bi-implanted amorphous chalcogenide films (2015)
Journal Article
Fedorenko, Y., & Hughes, M. (2015). Electrical properties of bi-implanted amorphous chalcogenide films. Thin Solid Films, 589, 369-375. https://doi.org/10.1016/j.tsf.2015.05.036

The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge–Sb–Te, and Ga–La–S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogeni... Read More about Electrical properties of bi-implanted amorphous chalcogenide films.

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies (2014)
Journal Article
silicon for photonic and quantum technologies. Optics express, 22(24), 29292-29303. https://doi.org/10.1364/OE.22.029292

We report the lattice site and symmetry of optically active Dy3+ and Tm3+ implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined... Read More about Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies.

n-type chalcogenides by ion implantation (2014)
Journal Article
Hughes, M., Fedorenko, Y., Gholipour, B., Yao, J., Lee, T., Gwilliam, R., …Curry, R. (2014). n-type chalcogenides by ion implantation. Nature communications, 5, 5346. https://doi.org/10.1038/ncomms6346

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty... Read More about n-type chalcogenides by ion implantation.

Electroluminescence from an electrostatically doped carbon nanotube field-effect transistor (2014)
Journal Article
carbon nanotube field-effect transistor. Nanoscience and Nanotechnology Letters, 6(10), 881-886. https://doi.org/10.1166/nnl.2014.1831

We report electroluminescence (EL) from a carbon nanotube field-effect transistor with split-gates. EL is generated by the electrostatic doping technique. Six EL bands could be observed, with the strongest band peaking between 0.867 and 0.850 eV wi... Read More about Electroluminescence from an electrostatically doped carbon nanotube field-effect transistor.

Ion-implantation-enhanced chalcogenide-glass resistive-switching devices (2014)
Journal Article
Hughes, M., Fedorenko, Y., Gwilliam, G., Homewood, K., Hinder, S., Gholipour, B., …Curry, R. (2014). Ion-implantation-enhanced chalcogenide-glass resistive-switching devices. Applied Physics Letters, 105, 083506. https://doi.org/10.1063/1.4894245

We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2–3 and 3–4V with r... Read More about Ion-implantation-enhanced chalcogenide-glass resistive-switching devices.

Photocurrent from a carbon nanotube diode with splitgate and asymmetric contact geometry (2014)
Journal Article
and asymmetric contact geometry. Materials Research Express, 1(2), 026304. https://doi.org/10.1088/2053-1591/1/2/026304

We fabricated a Ti/Pd asymmetrically contacted single carbon nanotube (CNT) field-effect transistor (FET) with split-gates. Transfer characteristics can be explained if the Schottky barrier for electrons is lower at the Pd contact than it is at th... Read More about Photocurrent from a carbon nanotube diode with splitgate and asymmetric contact geometry.

Waveguides in Ni-doped glass and glass–ceramic written with a 1 kHz femtosecond laser (2014)
Journal Article
femtosecond laser. Optical Materials, 36(6), 1604-1608. https://doi.org/10.1016/j.optmat.2014.04.042

We report waveguides in Ni-doped Li2O–Ga2O3–SiO2 (Ni:LGS) glass and glass–ceramic (GC) fabricated with a femtosecond (fs) laser with repetition rate of 1 kHz. When the glass is annealed to form a GC, the waveguides are erased. However, in the GC th... Read More about Waveguides in Ni-doped glass and glass–ceramic written with a 1 kHz femtosecond laser.

Split gate and asymmetric contact carbon nanotube optical devices (2014)
Journal Article
Hughes, M., Homewood, K., Curry, R., Ohno, Y., & Mizutani, T. (2014). Split gate and asymmetric contact carbon nanotube optical devices. https://doi.org/10.1117/12.2036962

Asymmetric contacts or split gate geometries can be used to obtain rectification, electroluminescence (EL) and photocurrent from carbon nanotube field effect transistors. Here, we report devices with both split gates and asymmetric contacts and show... Read More about Split gate and asymmetric contact carbon nanotube optical devices.

An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry (2013)
Journal Article
Hughes, M., Homewood, K., Curry, R., & Ohno, Y. (2013). An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry. Applied Physics Letters, 103(13), 133508. https://doi.org/10.1063/1.4823602

A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an ideality factor (η) of 1.38. When the gate above the... Read More about An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry.

Direct laser writing of relief diffraction gratings into a bulk chalcogenide glass (2012)
Journal Article
into a bulk chalcogenide glass. Journal of the Optical Society of America B, 29(10), 2779-2786. https://doi.org/10.1364/JOSAB.29.002779

We inscribed relief diffraction gratings with periods of 6, 14, and 24 μm into the surface of Ge15Ga3Sb12S70 bulk glass by the material’s ablation using a femtosecond λ � 800 nm Ti:sapphire pulsed laser. The laser writing was done with sample imple... Read More about Direct laser writing of relief diffraction gratings into a bulk chalcogenide glass.

Quantum efficiency of Nd3+-doped glasses under sunlight excitation (2011)
Journal Article
Suzuki, T., Kawai, H., Nasu, H., Hughes, M., Ohishi, Y., Mizuno, S., …Hasegawa, K. (2011). Quantum efficiency of Nd3+-doped glasses under sunlight excitation. Optical Materials, 33(12), 1952-1957. https://doi.org/10.1016/j.optmat.2011.03.045

The internal quantum efficiencies under sunlight and laser excitation were measured directly by an integrating sphere method for tellurite, borosilicate and fluoride glasses. The radiative quantum efficiency was also obtained by Judd–Ofelt analysis.... Read More about Quantum efficiency of Nd3+-doped glasses under sunlight excitation.

Spectroscopic properties of Er doped and Er, Nd codoped fluoride glasses under simulated sunlight illumination (2011)
Journal Article
under simulated sunlight illumination. Optical Materials, 33(12), 1958-1963. https://doi.org/10.1016/j.optmat.2011.03.041

We investigated the fluorescence characteristics of Er codoped Nd doped ZBLAN glasses proposed for solar pumped fiber laser (SPFL) under simulated sunlight. Er is used as a sensitizer because it absorbs a part of the ultraviolet and visible light whe... Read More about Spectroscopic properties of Er doped and Er, Nd codoped fluoride glasses under simulated sunlight illumination.

Electroluminescence from electrostatically doped carbon nanotubes (2011)
Presentation / Conference
Hughes, M., Hata, K., Kishimoto, S., Ohno, Y., & Mizutani, T. (2011, March). Electroluminescence from electrostatically doped carbon nanotubes. Presented at The Japan Society of Applied Physics 58th Spring Meeting, Kanagawa Institute of Technology, Kanagawa

Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass (2011)
Journal Article
Hughes, M., Curry, R., & Hewak, D. (2011). Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass. Optical Materials, 33, 315-322. https://doi.org/10.1016/j.optmat.2010.09.007

Vanadium doped chalcogenide glass has potential as an active gain medium, particularly at telecommunications wavelengths. This dopant has three spin allowed absorption transitions at 1100, 737 and 578 nm, and a spin forbidden absorption transition... Read More about Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass.

Spectroscopy of bismuth-doped lead–aluminum–germanate glass and yttrium–aluminum–silicate glass (2010)
Journal Article
yttrium–aluminum–silicate glass. Journal of Non-Crystalline Solids, 356(44-49), 2302-2309. https://doi.org/10.1016/j.jnoncrysol.2010.03.043

In this work we make a comparison between the spectroscopy of bismuth-doped lead–aluminum– germanate (Bi:PAG) glass and bismuth-doped yttrium–aluminum–silicate (Bi:YAS) glass. We report the variation in Bi absorption, emission and lifetime as the P... Read More about Spectroscopy of bismuth-doped lead–aluminum–germanate glass and yttrium–aluminum–silicate glass.

Quantum efficiency measurements on Nd-doped glasses for solar pumped lasers (2010)
Journal Article
Suzuki, T., Nasu, H., Hughes, M., Mizuno, S., Hasegawa, K., Ito, H., & Ohishi, Y. (2010). Quantum efficiency measurements on Nd-doped glasses for solar pumped lasers. Journal of Non-Crystalline Solids, 356(44-49), 2344-2349. https://doi.org/10.1016/j.jnoncrysol.2010.03.037

Nd-doped SiO2–B2O3–Na2O–Al2O3–CaO–ZrO2 glasses were prepared and optical properties such as absorption, lifetime and quantum efficiencies (QEs) of the emission were characterized. QE measurement system with natural sunlight as an excitation source wa... Read More about Quantum efficiency measurements on Nd-doped glasses for solar pumped lasers.

Towards a high-performance optical gain medium based on bismuth and aluminum co-doped germanate glass (2010)
Journal Article
and aluminum co-doped germanate glass. Journal of Non-Crystalline Solids, 356(6-8), 407-418. https://doi.org/10.1016/j.jnoncrysol.2009.11.028

In this paper we present the development process of glass based on bismuth and aluminum co-doped germanate (GAB) glass. We found the addition of PbO to this glass (GAPB glass) increased the quantum efficiency (QE). Excitation of GAPB glass at 808 n... Read More about Towards a high-performance optical gain medium based on bismuth and aluminum co-doped germanate glass.

The efficiencies of energy transfer from Cr to Nd ions in silicate glasses (2010)
Journal Article
Mizuno, S., Ito, H., Hasegawa, K., Nasu, H., Hughes, M., Suzuki, T., & Ohishi, Y. (2010). The efficiencies of energy transfer from Cr to Nd ions in silicate glasses. https://doi.org/10.1117/12.840822

The efficiency of energy transfer from Cr to Nd in silicate glasses has been examined in order to develop a gain medium for high-efficiency solar pumped fiber lasers (SPFLs). The internal quantum efficiency (QE) of the emission from the 4T2 state of... Read More about The efficiencies of energy transfer from Cr to Nd ions in silicate glasses.

Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method (2010)
Journal Article
Suzuki, T., Hughes, M., & Ohishi, Y. (2010). Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method. Journal of Luminescence, 130, 121-126. https://doi.org/10.1016/j.jlumin.2009.07.029

The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa2O4MgGa2O4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa2O4M... Read More about Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method.

Ultrabroad emission from a bismuth doped chalcogenide glass (2009)
Journal Article
Hughes, M., Akada, T., Suzuki, T., Ohishi, Y., & Hewak, D. (2009). Ultrabroad emission from a bismuth doped chalcogenide glass. Optics express, 17(22), 19345-19355. https://doi.org/10.1364/OE.17.019345

We report emission from a bismuth doped chalcogenide glass which is flattened, has a full width at half maximum (FWHM) of 600 nm, peaks at 1300 nm and covers the entire telecommunications window. At cryogenic temperatures the FWHM reaches 850 nm.... Read More about Ultrabroad emission from a bismuth doped chalcogenide glass.

Compositional optimization of bismuth-doped yttria–alumina–silica glass (2009)
Journal Article
Hughes, M., Suzuki, T., & Ohishi, Y. (2009). Compositional optimization of bismuth-doped yttria–alumina–silica glass. Optical Materials, 32(2), 368-373. https://doi.org/10.1016/j.optmat.2009.09.004

We fabricated three series of glasses in which the Y2O3, Bi2 O3 and Al2O3 contents of Bi-doped Y2O3:Al2O3:SiO2 glass were varied. We optimized the content of each component based on quantum efficiency (QE) and other optical properties. The strengt... Read More about Compositional optimization of bismuth-doped yttria–alumina–silica glass.

Spectral broadening in femtosecond laser written waveguides in chalcogenide glass (2009)
Journal Article
Hughes, M., Yang, W., & Hewak, D. (2009). Spectral broadening in femtosecond laser written waveguides in chalcogenide glass. Journal of the Optical Society of America B, 26(7), 1370-1378. https://doi.org/10.1364/JOSAB.26.001370

Nonlinear spectral broadening to 200 nm, from an initial width of 50 nm, has been demonstrated in gallium lanthanum sulphide glass waveguides from 1540 nm, 200 fs pulses at 30 nJ/pulse. A formation mechanism is presented for these femtosecond laser... Read More about Spectral broadening in femtosecond laser written waveguides in chalcogenide glass.

Spectroscopy of titanium-doped gallium lanthanum sulfide glass (2008)
Journal Article
lanthanum sulfide glass. Journal of the Optical Society of America B, 25(9), 1458-1465. https://doi.org/10.1364/JOSAB.25.001458

Titanium-doped gallium lanthanum sulfide (Ti:GLS) and gallium lanthanum oxysulfide (Ti:GLSO) glasses have an absorption band at ∼500–600 nm that cannot be fully resolved because of its proximity to the band edge of the glass. At concentrations >0.5%... Read More about Spectroscopy of titanium-doped gallium lanthanum sulfide glass.

Advanced bismuth-doped lead-germanate glass for broadband optical gain devices (2008)
Journal Article
broadband optical gain devices. Journal of the Optical Society of America B, 25(8), 1380-1386. https://doi.org/10.1364/JOSAB.25.001380

We fabricated a series of glasses with the composition 94.7- ͓GeO2-5Al2O3-0.3Bi2O3-͓PbO ( ͓ = 0–24 mol. %) Characteristic absorption bands of bismuth centered at 500, 700, 800, and 1000 nm were observed. Adding PbO was found to decrease the strengt... Read More about Advanced bismuth-doped lead-germanate glass for broadband optical gain devices.

Modified chalcogenide glasses for optical device applications (2007)
Thesis
Hughes, M. (in press). Modified chalcogenide glasses for optical device applications. (Thesis). University of Southampton

This thesis focuses on two different, but complementary, aspects of the modification of gallium lanthanum sulphide (GLS) glasses. Firstly the addition of transition metal ions as dopants is examined and their potential for use as active optical mat... Read More about Modified chalcogenide glasses for optical device applications.

Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass (2007)
Journal Article
Hughes, M., Hewak, D., & Curry, R. (2007). Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass. Proceedings of SPIE, 6469, https://doi.org/10.1117/12.699134

In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1% (molar). We demonstrate that below a critical doping concentration t... Read More about Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass.

Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass (2007)
Journal Article
chalcogenide glass. Applied Physics Letters, 90, 031108. https://doi.org/10.1063/1.2432280

Vanadiumdopedgalliumlanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730, and 1155nm identified by photoluminescence excitation measurements. Broad photoluminescence, with a full width at half maximum of ∼500nm , is observed... Read More about Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass.

Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass (2007)
Journal Article
Hughes, M., Yang, W., & Hewak, D. (2007). Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass. Applied Physics Letters, 90, 131113. https://doi.org/10.1063/1.2718486

The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optical characterization of the waveguides, they have proposed a formatio... Read More about Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass.

Optical and electronic properties of bismuth-implanted glasses
Journal Article
Hughes, M., Federenko, Y., Lee, T., Yao, J., Gholipour, B., Gwilliam, R., …Curry, R. Optical and electronic properties of bismuth-implanted glasses. https://doi.org/10.1117/12.2036933

Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all displ... Read More about Optical and electronic properties of bismuth-implanted glasses.

On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses
Journal Article
carrier-type reversal in Bi- and Pb-doped glasses. Optics express, 21(7), 8101-8115. https://doi.org/10.1364/OE.21.008101

Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and NIR photoluminescence (PL) bands result from Bi2+ and Bin clusters, respectively. Very similar centers are present in Bi- and Pb-doped oxide and ch... Read More about On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses.

Compositional dependence of the optical properties of bismuth doped lead-aluminum-germanate glass
Journal Article
Hughes, M., Suzuki, T., & Ohishi, Y. (in press). Compositional dependence of the optical properties of bismuth doped lead-aluminum-germanate glass. Optical Materials, 32(9), 1028-1034. https://doi.org/10.1016/j.optmat.2010.02.025

We report the compositional dependence of absorption, emission, decay constant and quantum efficiency (QE) of GeO2:Al2O3:PbO:Bi2O3 glass with the aim of finding the composition most suitable for a laser gain medium. As the Bi2O3 content was varied... Read More about Compositional dependence of the optical properties of bismuth doped lead-aluminum-germanate glass.